Properties of WNx/GaAs Schottky contacts prepared by ion...

Journal of Materials Science: Materials in Electronics 1992 / 09 Vol. 3; Iss. 3

Properties of WNx/GaAs Schottky contacts prepared by ion implantation of nitrogen

T. Lalinsky, J. Kuzmík, D. Gregušová, Ž. Mozolová, J. Breza, M. Feciško, P. Seidl
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Volume:
3
Language:
english
Pages:
5
DOI:
10.1007/bf00695512
Date:
September, 1992
File:
PDF, 435 KB
english, 1992
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