ABOVE 2 A/mm DRAIN CURRENT DENSITY OF GaN HEMTS GROWN ON...

International Journal of High Speed Electronics and Systems 2007 / 03 Vol. 17; Iss. 1

ABOVE 2 A/mm DRAIN CURRENT DENSITY OF GaN HEMTS GROWN ON SAPPHIRE

Medjdoub, F., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M. A., Grandjean, N., Kahn, E.
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Volume:
17
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/s012915640700428x
Date:
March, 2007
File:
PDF, 352 KB
english, 2007
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