High-quality, 2-inch-diameter m...

Japanese Journal of Applied Physics 2016 / 05 Vol. 55; Iss. 5S

High-quality, 2-inch-diameter m -plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds

Tsukada, Yusuke, Enatsu, Yuuki, Kubo, Shuichi, Ikeda, Hirotaka, Kurihara, Kaori, Matsumoto, Hajime, Nagao, Satoru, Mikawa, Yutaka, Fujito, Kenji
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FC01
Date:
May, 2016
File:
PDF, 1.03 MB
english, 2016
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