[IEEE 2016 IEEE International Meeting for Future of...

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[IEEE 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2016.6.23-2016.6.24)] 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Estimation of junction temperature at failure of SiC DMOSFETs in UIS test

Nanen, Y., Aketa, M., Asahara, H., Nakamura, T.
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Year:
2016
Language:
english
DOI:
10.1109/IMFEDK.2016.7521700
File:
PDF, 275 KB
english, 2016
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