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Effect of oxygen partial pressure on the density of states of amorphous InGaZnO thin-film transistors
Li, Jun, Huang, Chuan-Xin, Zhu, Wen-Qing, Zhang, Jian-Hua, Jiang, Xue-Yin, Zhang, Zhi-Lin, Li, Xi-FengVolume:
122
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-016-0447-3
Date:
October, 2016
File:
PDF, 1.79 MB
english, 2016