Control of SiO 2 /Si interface defects generation during thin dielectric film etching using CH x F y /Ar/O 2 plasma
Shigetoshi, Takushi, Fukasawa, Masanaga, Nagahata, Kazunori, Tatsumi, TetsuyaVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.06GB05
Date:
June, 2015
File:
PDF, 862 KB
english, 2015