The defect structure of GaAs after selenium implantation through a Si3N4layer
P. W. Hutchinson, R. K. Ball, P. S. Dobson, P. LeighVolume:
1
Language:
english
Pages:
4
DOI:
10.1007/bf00721928
Date:
November, 1982
File:
PDF, 1003 KB
english, 1982