[IEEE 2016 IEEE Silicon Nanoelectronics Workshop (SNW) -...

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[IEEE 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2016.6.12-2016.6.13)] 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Increased drain-induced variability and within-device variability in extremely narrow silicon nanowire MOSFETs with width down to 2nm

Mizutani, Tomoko, Takeuchi, Kiyoshi, Suzuki, Ryota, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
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Year:
2016
Language:
english
DOI:
10.1109/SNW.2016.7578021
File:
PDF, 1.30 MB
english, 2016
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