![](/img/cover-not-exists.png)
[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, H., Ritzenthaler, R., Hikavyy, A., Kim, M. S., Tao, Z., Wostyn, K., Chew, S. A., De Keersgieter, A., Mannaert, G., Rosseel, E., Schram, T., Devriendt, K., Tsvetanova, D., Dekkers, H., DemuyncYear:
2016
Language:
english
DOI:
10.1109/VLSIT.2016.7573416
File:
PDF, 720 KB
english, 2016