OG-FET: An in-situ Oxide, GaN interlayer based vertical...

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IEEE Electron Device Letters 2016

OG-FET: An in-situ Oxide, GaN interlayer based vertical trench MOSFET

Gupta, Chirag, Chan, Silvia H., Enatsu, Yuuki, Agarwal, Anchal, Keller, Stacia, Mishra, Umesh K.
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2616508
File:
PDF, 550 KB
english, 2016
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