Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN...

Materials Science Forum 2016 / 5 Vol. 858

Growth of Crack-Free GaN on Si HEMTs with Fe-Doped GaN Using Un-Doped GaN Interlayer

Era, Atsushi, Hatakenaka, Susumu, Okazaki, Hiroyuki, Kamo, Yoshitaka, Nishida, Takehiro, Watanabe, Hiroshi
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.1194
Date:
May, 2016
File:
PDF, 1.66 MB
english, 2016
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