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Analytical modeling and numerical simulation of novel double-gate InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance
Subramaniam, Subha, Joshi, Sangeeta M., Awale, R.N.Language:
english
Journal:
Engineering Science and Technology, an International Journal
DOI:
10.1016/j.jestch.2016.08.014
Date:
September, 2016
File:
PDF, 888 KB
english, 2016