Microstructural properties of Ni-silicide films formed on...

Microelectronic Engineering 2016 / 11 Vol. 165

Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Choi, Seongheum, Kim, Jinyong, Choi, Juyun, Cho, Sungkil, Lee, Minhyeong, Ko, Eunjung, Rho, Il Cheol, Kim, Choon Hwan, Kim, Yunseok, Ko, Dae-Hong, Kim, Hyoungsub
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Volume:
165
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2016.08.003
Date:
November, 2016
File:
PDF, 1.28 MB
english, 2016
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