Gate oxide degradation of SiC MOSFET under short-circuit...

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Microelectronics Reliability 2016 / 9

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

Mbarek, S., Fouquet, F., Dherbecourt, P., Masmoudi, M., Latry, O.
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Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2016.07.132
Date:
September, 2016
File:
PDF, 960 KB
english, 2016
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