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Microelectronics Reliability 2016 / 7

Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

Shi, R.P., Huang, X.D., Sin, Johnny K.O., Lai, P.T.
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Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2016.07.148
Date:
July, 2016
File:
PDF, 1.85 MB
english, 2016
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