![](/img/cover-not-exists.png)
The migration of the defects induced by high-dose ion implantation of arsenic in silicon
R. Marinescu, S. Prisecaru, R. AlbuVolume:
11
Language:
english
Pages:
2
DOI:
10.1007/bf00731113
Date:
April, 1992
File:
PDF, 298 KB
english, 1992