Atomic nature of the Schottky barrier height formation of...

Applied Surface Science 2017 / 01 Vol. 393

Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study

Cheng, Chiu-Ping, Chen, Wan-Sin, Lin, Keng-Yung, Wei, Guo-Jhen, Cheng, Yi-Ting, Lin, Yen-Hsun, Wan, Hsien-Wen, Pi, Tun-Wen, Tung, Raymond T., Kwo, Jueinai, Hong, Minghwei
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Volume:
393
Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2016.10.027
Date:
January, 2017
File:
PDF, 1.55 MB
english, 2017
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