[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - A new variation plot to examine the interfacial-dipole induced work-function variation in advanced high-k metal-gate CMOS devices
Hsieh, E. R., Wang, Y. D., Chung, Steve S., Ke, J. C., Yang, C. W., Hsu, S.Year:
2016
Language:
english
DOI:
10.1109/VLSIT.2016.7573435
File:
PDF, 694 KB
english, 2016