[IEEE 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Hsinchu, Taiwan (2016.5.4-2016.5.6)] 2016 5th International Symposium on Next-Generation Electronics (ISNE) - X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD
Xin, Jieping, Chang, Chieh Miao, Hsueh, Chih-han, Lee, Jyh-Fu, Chen, Jin-Ming, Lin, Hao-Hsiung, Lu, Na, Ferguson, Ian T., Guan, Yongjing, Wan, Lingyu, Yang, Qingyi, Feng, Zhe ChuanYear:
2016
Language:
english
DOI:
10.1109/isne.2016.7543313
File:
PDF, 207 KB
english, 2016