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SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2006 - San Jose, CA (Saturday 21 January 2006)] Gallium Nitride Materials and Devices - Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
Bockowski, M., Litton, Cole W., Grote, James G., Nowak, G., Kamler, G., Morkoc, Hadis, Madhukar, Anupam, Łucznik, B., Wróblewski, M., Kwiatkowski, P., Jasik, K., Krukowski, S., Porowski, S., Grzegory,Volume:
6121
Year:
2006
Language:
english
DOI:
10.1117/12.645066
File:
PDF, 4.29 MB
english, 2006