Growth features and spectroscopic structure investigations...

Semiconductors 2016 / 9 Vol. 50; Iss. 9

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

Seredin, P. V., Goloshchapov, D. L., Lenshin, A. S., Lukin, A. N., Fedyukin, A. V., Arsentyev, I. N., Bondarev, A. D., Lubyanskiy, Y. V., Tarasov, I. S.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/s1063782616090219
Date:
September, 2016
File:
PDF, 1.13 MB
english, 2016
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