Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs
Liu, Siyang, Gu, Chunde, Wei, Jiaxing, Qian, Qinsong, Sun, Weifeng, Huang, Alex Q.Volume:
63
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2604253
Date:
November, 2016
File:
PDF, 2.88 MB
english, 2016