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[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - NBTI in Replacement Metal Gate SiGe core FinFETs: Impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneals
Franco, J., Kaczer, B., Chasin, A., Mertens, H., Ragnarsson, L.-A., Ritzenthaler, R., Mukhopadhyay, S., Arimura, H., Roussel, Ph. J., Bury, E., Horiguchi, N., Linten, D., Groeseneken, G., Thean, A.Year:
2016
Language:
english
DOI:
10.1109/IRPS.2016.7574533
File:
PDF, 530 KB
english, 2016