[IEEE 2016 IEEE International Nanoelectronics Conference...

  • Main
  • [IEEE 2016 IEEE International...

[IEEE 2016 IEEE International Nanoelectronics Conference (INEC) - Chengdu, China (2016.5.9-2016.5.11)] 2016 IEEE International Nanoelectronics Conference (INEC) - A 200-V SOI p-Channel LDMOS with thick gate oxide layer

Liang, Tao, He, Yitao, Lu, Lu, Qiao, Ming, Zhang, Bo
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2016
Language:
english
DOI:
10.1109/INEC.2016.7589301
File:
PDF, 360 KB
english, 2016
Conversion to is in progress
Conversion to is failed