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[IEEE 2016 IEEE International Nanoelectronics Conference (INEC) - Chengdu, China (2016.5.9-2016.5.11)] 2016 IEEE International Nanoelectronics Conference (INEC) - A 200-V SOI p-Channel LDMOS with thick gate oxide layer
Liang, Tao, He, Yitao, Lu, Lu, Qiao, Ming, Zhang, BoYear:
2016
Language:
english
DOI:
10.1109/INEC.2016.7589301
File:
PDF, 360 KB
english, 2016