Normally-off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3...

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IEEE Electron Device Letters 2016

Normally-off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

Han, Sang-Woo, Noh, Youngkyun, Jo, Min-Gi, Kim, Seung-Hwan, Oh, Jae-Eung, Seo, Kwang-Seok, Cha, Ho-Young
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2621184
File:
PDF, 342 KB
english, 2016
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