Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions
Li, GongTan, Zhan, RunZe, Yang, Bo-Ru, Liu, Chuan, Dong, ChengYuan, Lee, Chia-Yu, Wu, Yuan-Chun, Lu, Po-Yen, Deng, ShaoZhi, Shieh, Han-Ping D., Xu, NingShengVolume:
63
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2608970
Date:
November, 2016
File:
PDF, 2.71 MB
english, 2016