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effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
Tsatsulnikov, A. F., Lundin, V. W., Zavarin, E. E., Yagovkina, M. A., Sakharov, A. V., Usov, S. O., Zemlyakov, V. E., Egorkin, V. I., Bulashevich, K. A., Karpov, S. Yu., Ustinov, V. M.Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616100237
Date:
October, 2016
File:
PDF, 681 KB
english, 2016