[IEEE 2016 IEEE MTT-S International Wireless Symposium (IWS) - Shanghai, China (2016.3.14-2016.3.16)] 2016 IEEE MTT-S International Wireless Symposium (IWS) - S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications
Zhang, Wogong, Oehme, Michael, Kostecki, Konrad, Matthies, Klaus, Stefani, Viktor, Raju, Ashraful I., Noll, Daniel, Srinivasan, V.S. Senthil, Korner, Roman, Kasper, Erich, Schulze, JorgYear:
2016
Language:
english
DOI:
10.1109/IEEE-IWS.2016.7585419
File:
PDF, 1.20 MB
english, 2016