Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation
Kim, Dae-Kyoung, Jeong, Kwang-Sik, Kang, Yu-Seon, Kang, Hang-Kyu, Cho, Sang W., Kim, Sang-Ok, Suh, Dongchan, Kim, Sunjung, Cho, Mann-HoVolume:
6
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep34945
Date:
October, 2016
File:
PDF, 1.85 MB
english, 2016