Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe 2
Li, Xufan, Puretzky, Alexander A., Sang, Xiahan, KC, Santosh, Tian, Mengkun, Ceballos, Frank, Mahjouri-Samani, Masoud, Wang, Kai, Unocic, Raymond R., Zhao, Hui, Duscher, Gerd, Cooper, Valentino R., RoLanguage:
english
Journal:
Advanced Functional Materials
DOI:
10.1002/adfm.201603850
Date:
October, 2016
File:
PDF, 2.58 MB
english, 2016