[IEEE 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Hsinchu, Taiwan (2016.5.4-2016.5.6)] 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Improving the light output power of DUV-LED by introducing the intrinsic last quantum barrier interlayer on the high-quality AlN template
Tsai, Chia-Lung, Liu, Hsueh-Hsing, Chen, Jun-Wei, Ikenaga, Kazutada, Lu, Chien-Pin, Tabuchi, Toshiya, Matsumoto, Koh, Fu, Yi-KengYear:
2016
Language:
english
DOI:
10.1109/isne.2016.7543318
File:
PDF, 1.10 MB
english, 2016