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Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity, and mobility
Malasi, A., Taz, H., Farah, A., Patel, M., Lawrie, B., Pooser, R., Baddorf, A., Duscher, G., Kalyanaraman, R.Volume:
5
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep18157
Date:
December, 2015
File:
PDF, 1014 KB
english, 2015