Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory
Chen, Po-Hsun, Chang, Ting-Chang, Chang, Kuan-Chang, Tsai, Tsung-Ming, Pan, Chih-Hung, Shih, Chih-Cheng, Wu, Cheng-Hsien, Yang, Cheng-Chi, Su, Yu-Ting, Lin, Chih-Yang, Tseng, Yi-Ting, Chen, Min-Chen,Year:
2016
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2619704
File:
PDF, 2.75 MB
english, 2016