Heterojunction low-barrier gaas diodes with an improved reverseI–Vcharacteristic
Yunusov, I. V., Kagadei, V. A., Fazleeva, A. Y., Arykov, V. S.Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/s106378261608025x
Date:
August, 2016
File:
PDF, 346 KB
english, 2016