Temperature dependence of the inhomogeneous parameters of...

Semiconductor Science and Technology 2016 / 08 Vol. 31; Iss. 8

Temperature dependence of the inhomogeneous parameters of the Mo/4H–SiC Schottky barrier diodes

Latreche, A, Ouennoughi, Z, Weiss, R
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Volume:
31
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/31/8/085008
Date:
August, 2016
File:
PDF, 1.40 MB
english, 2016
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