Deposition of heteroepitaxial layers of topological...

Journal of Communications Technology and Electronics 2016 / 2 Vol. 61; Iss. 2

Deposition of heteroepitaxial layers of topological insulator Bi2Se3in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3and (100) GaAs substrates

Kuznetsov, P. I., Luzanov, V. A., Yakusheva, G. G., Temiryazev, A. G., Shchamkhalova, B. S., Zhitov, V. A., Zakharov, L. Yu.
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Volume:
61
Language:
english
Journal:
Journal of Communications Technology and Electronics
DOI:
10.1134/S1064226916010083
Date:
February, 2016
File:
PDF, 1.03 MB
english, 2016
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