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Transistor-level characterization of static random access memory bit failures induced by random telegraph noise
Mizutani, Tomoko, Saraya, Takuya, Takeuchi, Kiyoshi, Kobayashi, Masaharu, Hiramoto, ToshiroVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.04ED05
Date:
April, 2016
File:
PDF, 1.63 MB
english, 2016