Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET...

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International Journal of Circuit Theory and Applications 2016 / 11

Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology

Zeinali, Behzad, Madsen, Jens Kargaard, Raghavan, Praveen, Moradi, Farshad
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Language:
english
Journal:
International Journal of Circuit Theory and Applications
DOI:
10.1002/cta.2280
Date:
November, 2016
File:
PDF, 779 KB
english, 2016
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