Origin of unintentional gallium incorporation into AlN...

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physica status solidi (b) 2016 / 10

Origin of unintentional gallium incorporation into AlN spacer layer grown by metalorganic vapor phase epitaxy

Yamada, Atsushi, Ishiguro, Tetsuro, Kotani, Junji, Tomabechi, Shuichi, Nakamura, Norikazu
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Language:
english
Journal:
physica status solidi (b)
DOI:
10.1002/pssb.201600496
Date:
October, 2016
File:
PDF, 681 KB
english, 2016
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