Effect of a low-temperature-grown GaAs layer on InAs...

Semiconductors 2016 / 11 Vol. 50; Iss. 11

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Kosarev, A. N., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.
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Volume:
50
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782616110154
Date:
November, 2016
File:
PDF, 300 KB
english, 2016
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