Comprehensive characterization of AlGaN/GaN...

Physica status solidi 2016 / 11

Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO 2 gate dielectric

Lin, Yu-Shyan, Lu, Chi-Che, Hsu, Wei-Chou
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Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201600227
Date:
November, 2016
File:
PDF, 349 KB
english, 2016
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