P-Channel InGaN/GaN heterostructure...

Scientific Reports 2016 / 3 Vol. 6

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

Zhang, Kexiong, Sumiya, Masatomo, Liao, Meiyong, Koide, Yasuo, Sang, Liwen
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Volume:
6
Language:
english
Journal:
Scientific Reports
DOI:
10.1038/srep23683
Date:
March, 2016
File:
PDF, 1.11 MB
english, 2016
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