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Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al 2 O 3 -Dielectric
Wang, You-Hang, Ma, Qian, Zheng, Li-Li, Liu, Wen-Jun, Ding, Shi-Jin, Lu, Hong-Liang, Zhang, WeiVolume:
33
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/33/5/058501
Date:
May, 2016
File:
PDF, 663 KB
english, 2016