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Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
Chen, Fan W., Ilatikhameneh, Hesameddin, Ameen, Tarek A., Klimeck, Gerhard, Rahman, RajibYear:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2627538
File:
PDF, 8.46 MB
english, 2016