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Comparing electrical performance of GaN trench-gate MOSFETs with a -plane $(11\bar{2}0)$ and m -plane $(1\bar{1}00)$ sidewall channels
Gupta, Chirag, Chan, Silvia H., Lund, Cory, Agarwal, Anchal, Koksaldi, Onur S., Liu, Junquian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.Volume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.121001
Date:
December, 2016
File:
PDF, 1.68 MB
english, 2016