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Development of wider bandgapn-typea-SiOx:H andμc-SiOx:H as both doped and intermediate reflecting layer fora-Si:H/a-Si1-xGex:H tandem solar cells
Chen, Po-Wei, Chen, Pei-Ling, Tsai, Chuang-ChuangVolume:
12
Language:
english
Journal:
Electronic Materials Letters
DOI:
10.1007/s13391-016-4004-1
Date:
July, 2016
File:
PDF, 370 KB
english, 2016