Statistical Modeling of Gate Capacitance Variations Induced...

Chinese Physics Letters 2015 / 10 Vol. 32; Iss. 10

Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations

Lü, Wei-Feng, Wang, Guang-Yi, Lin, Mi, Sun, Ling-Ling
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Volume:
32
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/32/10/108502
Date:
October, 2015
File:
PDF, 690 KB
english, 2015
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