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Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects
Abunahla, Heba, Mohammad, Baker, Homouz, Dirar, Okelly, Curtis J.Year:
2016
Language:
english
Journal:
IEEE Transactions on Circuits and Systems I: Regular Papers
DOI:
10.1109/TCSI.2016.2622225
File:
PDF, 1.71 MB
english, 2016