GaN MOSFET With Good Reliability for Both Logic and Power...

IEEE Journal of the Electron Devices Society 2016 / 9 Vol. 4; Iss. 5

GaN MOSFET With Good Reliability for Both Logic and Power Applications

Yi, Shih-Han, Ruan, Dun-Bao, Di, Shaoyan, Liu, Xiaoyan, Wu, Yung Hsien, Chin, Albert
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Volume:
4
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2016.2594837
Date:
September, 2016
File:
PDF, 1.45 MB
english, 2016
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