Electrical hysteresis in p-GaN metal–oxide–semiconductor...

Applied Physics Express 2016 / 12 Vol. 9; Iss. 12

Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al 2 O 3 as gate dielectric

Zhang, Kexiong, Liao, Meiyong, Imura, Masataka, Nabatame, Toshihide, Ohi, Akihiko, Sumiya, Masatomo, Koide, Yasuo, Sang, Liwen
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Volume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.121002
Date:
December, 2016
File:
PDF, 1.32 MB
english, 2016
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